Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

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• 作者：Xin Li ; Suresh Sundaram ; Youssef El Gmili ; Taha Ayari ; Renaud Puybaret ; Gilles Patriarche ; Paul L. Voss ; Jean Paul Salvestrini ; Abdallah Ougazzaden
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：June 1, 2016
• 年：2016
• 卷：16
• 期：6
• 页码：3409-3415
• 全文大小：541K
• 年卷期：0
• ISSN：1528-7505

文摘

This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and hexagonal phase of the epitaxial layers were confirmed by X-ray diffraction, Raman spectrum, and cross-section scanning transmission electron microscopy. The surface of BN over a 2-in. wafer exhibits specific 2D material morphology features for different BN thicknesses, from an atomically flat surface to a honeycomb wrinkle network. The grown epitaxial layers demonstrate a large absorption coefficient (∼10p>6p> cmp>–1p>) above the bandgap energy of 5.87 eV with direct band transition behavior. Near-bandgap luminescence at 216.5 nm (5.73 eV) and characteristic defect band recombination at longer wavelengths were observed by cathodoluminescence at 77 K. This wafer-scale MOVPE-grown layered h-BN with different 2D morphology and with near bandgap emission can facilitate applications such as graphene-based electronics, advanced van der Waals heterostructures, and deep UV photonics.