Extremely High- and Low-Density of Ga Droplets on GaAs{111}A,B: Surface-Polarity Dependence

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• 作者：Akihiro Ohtake ; Neul Ha ; Takaaki Mano
• 刊名：Crystal Growth & Design
• 出版年：2015
• 出版时间：January 7, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：485-488
• 全文大小：352K
• ISSN：1528-7505

文摘

Formation processes of Ga droplets on polar (111)A and (111)B surfaces of GaAs have been investigated. A single Ga atom forms a stable nucleus on the (111)A surface, so that the formation of extremely high-density of Ga droplets is achieved (2.8 脳 10¹² cm^鈥?). On the (111)B surface, the initial Ga deposition on both As-rich (2 脳 2) and Ga-rich (鈭?9 脳 鈭?9) reconstructions leads to the formation of a two-dimensional GaAs layer having a more Ga-rich (3 脳 2) reconstruction. The Ga droplets are formed on the (3 脳 2) surface with their densities being 4 orders of magnitude lower than those for the (111)A orientation.