Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying

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• 作者：Gilles Patriarche ; Frank Glas ; Maria Tchernycheva ; Corinne Sartel ; Ludovic Largeau ; Jean-Christophe Harmand ; George E. Cirlin
• 刊名：Nano Letters
• 出版年：2008
• 出版时间：June 2008
• 年：2008
• 卷：8
• 期：6
• 页码：1638 - 1643
• 全文大小：1360K
• 年卷期：v.8,no.6(June 2008)
• ISSN：1530-6992

文摘

We bury vertical free-standing core−shell GaAs/AlGaAs nanowires by a planar GaAs overgrowth. As the nanowires get buried, their crystalline structure progressively transforms: whereas the upper emerging part retains its initial wurtzite structure, the buried part adopts the zinc blende structure of the burying layer. The burying process also suppresses all the stacking faults that existed in the wurtzite nanowires. We consider two possible mechanisms for the structural transition upon burying, examine how they can be discriminated from each other, and explain why the transition is favorable.