文摘
Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si nanowires (NWs) grown by chemical vapor depositionfrom TiSi2 catalyst sites. NWs grown with average diameter of 20 nm were etched and oxidized to thin and passivate the wires. The PLemission blue shifted continuously with decreasing nanowire diameter. Slowed oxidation was observed for small nanowire diameters andprovides a high degree of control over the emission wavelength. Transmission electron microscopy, PL, and time-resolved PL data are fullyconsistent with quantum confinement of charge carriers in the Si nanowire core being the source of luminescence. These light emittingnanowires could find application in future CMOS-compatible photonic devices.