Traps in Regioregular Poly(3-hexylthiophene) and its Blend with [6,6]-Phenyl-C61-Butyric Acid Methyl Ester for Polymer Solar Cells
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- 作者：Cheng-Yen Yu ; Tzu-Hao Jen ; Show-An Chen
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：May 22, 2013
- 年：2013
- 卷：5
- 期：10
- 页码：4086-4092
- 全文大小：388K
- 年卷期：v.5,no.10(May 22, 2013)
- ISSN：1944-8252
文摘
Thermally stimulated current (TSC) technique is used to characterize traps in the regioregular poly(3-hexylthiophene) (rr-P3HT) and its blend with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). A hole trap in bulk rr-P3HT and an interfacial hole trap located at indium tin oxide (ITO)/rr-P3HT interface are revealed from the TSC measurement. Besides, molecular oxygen (O2) can form a deep electron trap with an onset of detrapping temperature at 225 K in rr-P3HT, in which O2 is located at the main chain region and the detrapping process is induced by chain motions under elevated temperature. In the blend of rr-P3HT:PCBM (1:1 w/w), additional hole trap states are generated in this blend system as compared to those of pure rr-P3HT and PCBM; however, these hole trap states can be reduced by thermal or solvent annealing approaches. Similar to rr-P3HT, a deep electron trap with an onset of detrapping temperature at 250 K can be formed in the blend after O2 exposure. In the case of low PCBM content in the blend (rr-P3HT:PCBM weight ratio of 4:1), an additional electron trap is generated.