Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics
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- 作者：Stephen T. Meyers ; Jeremy T. Anderson ; David Hong ; Celia M. Hung ; John F. Wager ; Douglas A. Keszler
- 刊名：Chemistry of Materials
- 出版年：2007
- 出版时间：August 7, 2007
- 年：2007
- 卷：19
- 期：16
- 页码：4023 - 4029
- 全文大小：255K
- 年卷期：v.19,no.16(August 7, 2007)
- ISSN：1520-5002
文摘
Aluminum oxide phosphate thin films have been deposited via spin coating from aqueous solution andutilized as gate dielectrics in thin-film transistors. Films are atomically smooth, dense, and amorphous,while exhibiting excellent morphological stability to 1000 
f">C. Film chemistry and structure are investigatedby using an array of analytical techniques including X-ray diffraction, FT-IR spectroscopy, and electron-microprobe analysis. Dielectric film functionality and quality are explored through integration in capacitorand thin-film transistor devices. Film permittivity for an Al2PO5.5 composition is found to be 4.8 incombination with leakage current densities <10 nA cm-2 at 1 MV cm-1 and current-limited breakdownfields up to 10 MV cm-1. Thin-film transistors fabricated with these oxide phosphate dielectrics andsputtered ZnO channels exhibit strong field-effect and current saturation with incremental mobilities upto 3.5 cm2 V-1 s-1. The ability of the amorphous matrix to accommodate additional oxide componentsis demonstrated by the incorporation of La2O3 and a resulting increase in film permittivity to 8.5, whilemaintaining breakdown fields >4 MV cm-1.
f">C. Film chemistry and structure are investigatedby using an array of analytical techniques including X-ray diffraction, FT-IR spectroscopy, and electron-microprobe analysis. Dielectric film functionality and quality are explored through integration in capacitorand thin-film transistor devices. Film permittivity for an Al2PO5.5 composition is found to be 4.8 incombination with leakage current densities <10 nA cm-2 at 1 MV cm-1 and current-limited breakdownfields up to 10 MV cm-1. Thin-film transistors fabricated with these oxide phosphate dielectrics andsputtered ZnO channels exhibit strong field-effect and current saturation with incremental mobilities upto 3.5 cm2 V-1 s-1. The ability of the amorphous matrix to accommodate additional oxide componentsis demonstrated by the incorporation of La2O3 and a resulting increase in film permittivity to 8.5, whilemaintaining breakdown fields >4 MV cm-1.