Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs

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• 作者：Stephen T. Meyers ; Jeremy T. Anderson ; Celia M. Hung ; John Thompson ; John F. Wager ; Douglas A. Keszler
• 刊名：Journal of the American Chemical Society
• 出版年：2008
• 出版时间：December 24, 2008
• 年：2008
• 卷：130
• 期：51
• 页码：17603-17609
• 全文大小：338K
• 年卷期：v.130,no.51(December 24, 2008)
• ISSN：1520-5126

文摘

A simple, low-cost, and nontoxic aqueous ink chemistry is described for digital printing of ZnO films. Selective design through controlled precipitation, purification, and dissolution affords an aqueous Zn(OH)_x(NH₃)_y^(2−x)+ solution that is stable in storage, yet promptly decomposes at temperatures below 150 °C to form wurtzite ZnO. Dense, high-quality, polycrystalline ZnO films are deposited by ink-jet printing and spin-coating, and film structure is elucidated via X-ray diffraction and electron microscopy. Semiconductor film functionality and quality are examined through integration in bottom-gate thin-film transistors. Enhancement-mode TFTs with ink-jet printed ZnO channels annealed at 300 °C are found to exhibit strong field effect and excellent current saturation in tandem with incremental mobilities from 4−6 cm² V⁻¹ s⁻¹. Spin-coated ZnO semiconductors processed at 150 °C are integrated with solution-deposited aluminum oxide phosphate dielectrics in functional transistors, demonstrating both high performance, i.e., mobilities up to 1.8 cm² V⁻¹ s⁻¹, and the potential for low-temperature solution processing of all-oxide electronics.