Benzo[b]thiophene-Fused Boron and Silicon Ladder Acenes

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• 作者：Lauren G. Mercier ; Warren E. Piers ; Ross W. Harrington ; William Clegg
• 刊名：Organometallics
• 出版年：2013
• 出版时间：November 25, 2013
• 年：2013
• 卷：32
• 期：22
• 页码：6820-6826
• 全文大小：349K
• 年卷期：v.32,no.22(November 25, 2013)
• ISSN：1520-6041

文摘

Synthetic routes to three new heteroacene compounds in which two benzo[b]thienyl units are bridged by dimethylsilyl and/or mesitylboryl units are described. In the Si/Si and Si/B compounds 1-syn and 3-syn, respectively, the sulfur atoms of the flanking benzo[b]thiophenes are disposed in meta positions on the central six-membered heterocycle, while in the B/B compound 4-anti, they are para to each other; the reasons for this lie in the synthetic method employed to prepare 4-anti. All three compounds were crystallographically characterized and their photophysical properties examined. A comprehensive examination of their photophysical properties shows that they are weakly absorbing and fluorescing materials, with the diborin derivative 4-anti exhibiting the most red-shifted absorption maxima and largest fluorescence quantum yield.