Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors

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• 作者：Liping Xu ; Xin Li ; Zhaoyao Zhan ; Liang Wang ; Shuanglong Feng ; Xiangyu Chai ; Wenqiang Lu ; Jun Shen ; Zhankun Weng ; Jie Sun
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：September 16, 2015
• 年：2015
• 卷：7
• 期：36
• 页码：20264-20271
• 全文大小：443K
• ISSN：1944-8252

文摘

Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO₂ layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO₂/Si substrate through vapor鈥搒olid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO₂/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO₂/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.