文摘
Epitaxial-stabilized (110) NdNiO3−δ films were first realized successfully by chemical solution deposition under ambient oxygen annealing. Cross-section transmission electronic microscopy observation demonstrates the interface is sharp and coherent due to epitaxial stabilization. The resistance change across the metal−insulator transition, the transition sharpness, as well as the metallic state at 300 K are about 500, 0.14 − ln Ω/K ln K, and 0.03 1/K2, respectively, which are comparable to the values for the films formed by vacuum-based methods, indicating the high-quality of the derived films. The successful achievement of (110) NdNiO3−δ films with a sharp metal−insulator transition will provides an alternative route for preparation of high-quality perovskite nickelate films using ambient oxygen annealing.