Solid鈥揕iquid鈥揤apor Etching of Semiconductor Nanowires

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• 作者：Ho Yee Hui ; Michael A. Filler
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6939-6945
• 全文大小：430K
• ISSN：1530-6992

文摘

The vapor鈥搇iquid鈥搒olid (VLS) mechanism enables the bottom-up, or additive, growth of semiconductor nanowires. Here, we demonstrate a reverse process, whereby catalyst atoms are selectively removed from the eutectic catalyst droplet. This process, which is driven by the dicarbonyl precursor 2,3-butanedione, results in axial nanowire etching. Experiments as a function of substrate temperature, etchant flow rate, and nanowire diameter support a solid鈥搇iquid鈥搗apor (SLV) mechanism. An etch model with reaction at the liquid鈥搗apor interface as the rate-limiting step is consistent with our experiments. These results identify a new mechanism to in situ tune the concentration of semiconductor atoms in the catalyst droplet.