Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors

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• 作者：Ping Liu ; Yiliang Wu ; Yuning Li ; Beng S. Ong ; and Shiping Zhu
• 刊名：Journal of the American Chemical Society
• 出版年：2006
• 出版时间：April 12, 2006
• 年：2006
• 卷：128
• 期：14
• 页码：4554 - 4555
• 全文大小：61K
• 年卷期：v.128,no.14(April 12, 2006)
• ISSN：1520-5126

文摘

A novel solution-processed, compositionally and structurally stable dual-layer gate dielectric composed of a UV-cured poly(4-vinyl phenol)-co-poly(methyl methacrylate) bottom layer and a thermally cross-linked poly(methyl silsesquioxane) top layer for organic thin-film transistors is described. This gate dielectric design, coupled with compatible solution-processable semiconductor and conductor materials, has enabled fabrication of all solution-processed, high-performance organic thin-film transistors on flexible substrates. High field-effect mobility and current on/off ratio, together with other desirable transistor properties, are demonstrated.