p-Channel Oxide Thin Film Transistors Using Solution-Processed Copper Oxide

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• 作者：Sang Yun Kim ; Cheol Hyoun Ahn ; Ju Ho Lee ; Yong Hun Kwon ; Sooyeon Hwang ; Jeong Yong Lee ; Hyung Koun Cho
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：April 10, 2013
• 年：2013
• 卷：5
• 期：7
• 页码：2417-2421
• 全文大小：275K
• 年卷期：v.5,no.7(April 10, 2013)
• ISSN：1944-8252

文摘

Cu₂O thin films were synthesized on Si (100) substrate with thermally grown 200-nm SiO₂ by sol鈥揼el spin coating method and postannealing under different oxygen partial pressure (0.04, 0.2, and 0.9 Torr). The morphology of Cu₂O thin films was improved through N₂ postannealing before O₂ annealing. Under relatively high oxygen partial pressure of 0.9 Torr, the roughness of synthesized films was increased with the formation of CuO phase. Bottom-gated copper oxide (Cu_xO) thin film transistors (TFTs) were fabricated via conventional photolithography, and the electrical properties of the fabricated TFTs were measured. The resulting Cu₂O TFTs exhibited p-channel operation, and field effect mobility of 0.16 cm²/(V s) and on-to-off drain current ratio of 1 脳 10² were observed in the TFT device annealed at P_O2 of 0.04 Torr. This study presented the potential of the solution-based process of the Cu₂O TFT with p-channel characteristics for the first time.

Keywords:

Cu₂O; p-type oxide semiconductor; p-channel TFT; sol鈭抔el; oxidation; two-step annealing; oxygen partial pressure