Flexible Organic Memory Devices with Multilayer Graphene Electrodes

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• 作者：Yongsung Ji ; Sangchul Lee ; Byungjin Cho ; Sunghoon Song ; Takhee Lee
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：July 26, 2011
• 年：2011
• 卷：5
• 期：7
• 页码：5995-6000
• 全文大小：871K
• 年卷期：0
• ISSN：1936-086X

文摘

We fabricated 8 × 8 cross-bar array-type flexible organic resistive memory devices with transparent multilayer graphene (MLG) electrodes on a poly(ethylene terephthalate) substrate. The active layer of the memory devices is a composite of polyimide and 6-phenyl-C61 butyric acid methyl ester. The sheet resistance of the MLG film on memory device was found to be ∼270 Ω/◻, and the transmittance of separated MLG film from memory device was ∼92%. The memory devices showed typical write-once-read-many (WORM) characteristics and an ON/OFF ratio of over ∼10⁶. The memory devices also exhibited outstanding cell-to-cell uniformity with flexibility. There was no substantial variation observed in the current levels of the WORM memory devices upon bending and bending cycling up to 10 000 times. A retention time of over 10⁴ s was observed without fluctuation under bending.