Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor
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- 作者：Nahee Park ; Haeyong Kang ; Jeongmin Park ; Yourack Lee ; Yoojoo Yun ; Jeong-Ho Lee ; Sang-Goo Lee ; Young Hee Lee ; Dongseok Suh
- 刊名：ACS Nano
- 出版年：2015
- 出版时间：November 24, 2015
- 年：2015
- 卷：9
- 期：11
- 页码：10729-10736
- 全文大小：572K
- ISSN：1936-086X
文摘
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1鈥?i>x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the VG sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.