Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors
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- 作者：Yanjie Zhao ; Drew Candebat ; Collin Delker ; Yunlong Zi ; David Janes ; Joerg Appenzeller ; Chen Yang
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：October 10, 2012
- 年：2012
- 卷：12
- 期：10
- 页码：5331-5336
- 全文大小：368K
- 年卷期：v.12,no.10(October 10, 2012)
- ISSN：1530-6992
文摘
Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III鈥揤 nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and the NW channel. Consequently the device performance is greatly impacted by the contacts. Here we present a simple model that explains how ambipolar device characteristics of NW-FETs and in particular the achievable on/off current ratio can be analyzed to gain a detailed idea of (a) the bandgap of the synthesized NWs and (b) the potential performance of various NW materials. In particular, we compare the model with our own transport measurements on InSb and InAs NW-FETs as well as results published by other groups. The analysis confirms excellent agreement with the predictions of the model, highlighting the potential of our approach to understand novel NW based materials and devices and to bridge material development and device applications.