Controlling a Nanowire Quantum Dot Band Gap Using a Straining Dielectric Envelope

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• 作者：Maaike Bouwes Bavinck ; Micha艂 Zieli艅ski ; Barbara J. Witek ; Tilman Zehender ; Erik P. A. M. Bakkers ; Val Zwiller
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：December 12, 2012
• 年：2012
• 卷：12
• 期：12
• 页码：6206-6211
• 全文大小：324K
• 年卷期：v.12,no.12(December 12, 2012)
• ISSN：1530-6992

文摘

We tune the emission wavelength of an InAsP quantum dot in an InP nanowire over 200 meV by depositing a SiO₂ envelope using plasma-enhanced chemical vapor deposition without deterioration of the optical quality. This SiO₂ envelope generates a controlled static strain field. Both red and blue shift can be easily achieved by controlling the deposition conditions of the SiO₂. Using atomistic empirical tight-binding calculations, we investigate the effect of strain on a quantum dot band structure for different compositions, shape, and crystal orientations. From the calculations, we estimate the applied strain in our experiment. This enables engineering of the band gap in nanowires with unprecedented possibilities to extend the application range of nanowire devices.

Keywords:

Nanowires; quantum dots; strain; photoluminescence; band gap engineering