文摘
We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the photothermoelectric effect and not by the separation of photoexcited electron鈥揾ole pairs across the Schottky barriers at the MoS2/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS2 that by an external electric field can be tuned between 鈭? 脳 102 and 鈭? 脳 105 渭V K鈥?. This large and tunable Seebeck coefficient of the single-layer MoS2 paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.
Keywords:
Molybdenum disulfide nanosheets; scanning photocurrent microscopy; photoresponse; photothermoelectric effect; Seebeck coefficient