Preparation and characterization of ultrananocrystalline diamond films in H2/Ar/CH4 gas mixtures system with novel filament structure
详细信息    查看全文
  • 作者:Jie Feng 丰杰 ; Sha-sha Li 李莎茿/a> ; Hao Luo 罗浩…
  • 刊名:Journal of Central South University
  • 出版年:2015
  • 出版时间:November 2015
  • 年:2015
  • 卷:22
  • 期:11
  • 页码:4097-4104
  • 全文大小:1,668 KB
  • 参考文献:[1]CORRIGAN T D, GRUEN D M, KRAUSS A R, ZAPOL P, CHANG R P H. The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond [J]. Diamond Related Materials, 2002, 11(1): 43–48.CrossRef
    [2]SUMANT A V, AUCIELLO O, LIAO M. MEMS/NEMS based on mono-, nano-, and ultrananocrystalline diamond films [J]. Mrs Bulletin, 2014, 39(6): 511–516.CrossRef
    [3]SUMANT A V, AUCIELLO O, CARPICK R W. Ultrananocrystalline and nanocrystalline diamond thin films for MEMS/NEMS applications [J]. Mrs Bulletin, 2010, 35(4): 281–288.CrossRef
    [4]AUCIELLO O, SUMANT A V. Status review of the science and technology of ultrananocrystalline diamond (UNCD™) films and application to multifunctional devices [J]. Diamond Related Materials, 2010, 19: 699–718.CrossRef
    [5]KRAUSS A R, AUCIELLO O, GRUEN D M, JAYATISSA A, SUMANT A, TUCEK J, MANCINI D C, MOLDOVAN N, ERDEMIR A, ERSOY D, GARDOS M N, BUSMANN H G, MEYER E M, DING M Q. Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices [J]. Diamond Related Materials, 2001, 10: 1952–1961.CrossRef
    [6]MICHALAS L, SAADA S, KOUTSOURELI M. Reliability of nanocrystalline diamond MEMS capacitive switches [C]// 8th European Microwave Integrated Circuits Conference (Eumic). Nuremberg, Germany: IEEE, 2013: 364–367.
    [7]GRUEN D M. Nanocrystalline diamond films [J]. Annual Review of Materials Science, 1999, 29: 211–259.CrossRef
    [8]MAY P W, SMITH J A, MANKELEVICH Y A. Deposition of NCD films using hot filament CVD and Ar/CH4/H2 gas mixtures [J]. Diamond Related Materials, 2006, 15(2/3): 345–352.CrossRef
    [9]HUANG S M, HONG F C N. Low temperature growths of nanocrystalline diamond films by plasma-assisted hot filament chemical vapor deposition [J]. Surface and Coatings Technology, 2006, 200(10): 3160–3165.CrossRef
    [10]WANG T, XIN H W, ZHANG Z M, DAI Y B, SHEN H S. The fabrication of nanocrystalline diamond films using hot filament CVD [J]. Diamond Related Materials, 2004, 13: 6–13.CrossRef
    [11]ZOU Y S, LI Z X, WU Y F. Deposition and characterization of smooth ultra-nanocrystalline diamond film in CH4/H2/Ar by microwave plasma chemical vapor deposition [J]. Vacuum, 2010, 84: 1347–1352.CrossRef
    [12]VAMIN V P, LAPTEV V A, RALVCHENKO V G. The state of the art in the growth of diamond crystals and films [J]. Inorganic Materials, 2006, 42: S1–S18.CrossRef
    [13]LIAO M Y, MENG X M, ZHOU X T, HU J Q, WANG Z G. Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si [J]. Journal of Crystal Growth, 2002, 236: 85–89.CrossRef
    [14]SUN Bi-wu, ZHAGN Xiao-pin, LIN Zhang-da. Growth mechanism and the order of appearance of diamond (111) and (100) facets [J]. Physical Review B, 1993, 47(15): 9816–9824.CrossRef
    [15]SANKARAN K J, PANDA K, SUNDARAVEL B. Enhancing electrical conductivity and electron field emission properties of ultrananocrystalline diamond films by copper ion implantation and annealing [J]. Journal of Applied Physics, 2014, 115(6): 063701.CrossRef
    [16]CEBIK J, MCDONOUGH J K, PEERALLY F. Raman spectroscopy study of the nanodiamond-to-carbon onion transformation [J]. Nanotechnology, 2013, 24(20): 205703.CrossRef
    [17]FERRARI A C, ROBERTSON J. Interpretation of Raman spectra of disordered and amorphous carbon [J]. Physical Review B, 2000, 61: 14095.CrossRef
    [18]NEMANICH R, GLASS J, LUCOVSKY G, SHRODER R. Raman scattering characterization of carbon bonding in diamond and diamondlike thin films [J]. Journal of Vacuum Science & Technology A, 1988, 6: 1783–1787.CrossRef
    [19]CHEN S T, CHU Y C, LIU C Y. Surface-enhanced Raman spectroscopy for characterization of nanodiamond seeded substrates and ultrananocrystalline diamond at the early-stage of plasma CVD growth process [J]. Diamond and Related Materials, 2012, 24: 161–166.CrossRef
    [20]FERRARI A C, ROBERTSON J. Origin of the 1150-cm-1 Raman mode in nanocrystalline diamond [J]. Physical Review B, 2001, 63: 121405.CrossRef
    [21]CORRIGAN T, GRUEN D, KRAUSS A, ZAPOL P, CHANG R. The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond [J]. Diamond Related Materals, 2002, 11: 43–48.CrossRef
    [22]LIANG Xing-bo, WANG Lei, ZHU Hong-liang, YANG De-ren. Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2/Ar gas mixture [J]. Surface & Coating Technology, 2007, 202: 261–267.CrossRef
  • 作者单位:Jie Feng 丰杰 (1) (2)
    Sha-sha Li 李莎莎 (1)
    Hao Luo 罗浩 (1)
    Qiu-ping Wei 魏秋平 (1) (3)
    Bing Wang 王兵 (4)
    Jian-guo Li 李建国 (2)
    Dong-ping Hu 胡东平 (2)
    Jun Mei 梅军 (2)
    Zhi-ming Yu 余志明 (1) (3)

    1. School of Materials Science and Engineering, Central South University, Changsha, 410083, China
    2. Institute of Systems Engineering, China Academy of Engineering Physics, Mianyang, 621900, China
    3. State Key Laboratory of Powder Metallurgy (Central South University), Changsha, 410083, China
    4. School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, 621010, China
  • 刊物类别:Engineering
  • 刊物主题:Engineering, general
    Metallic Materials
    Chinese Library of Science
  • 出版者:Central South University, co-published with Springer
  • ISSN:2227-5223
文摘
Diamond films were prepared by hot filament chemical vapor deposition (HFCVD) in a gas mixtures system of methane, argon and hydrogen. The composition and morphology in different deposition pressures and filament structures were investigated, as well as the friction and wear-resistant properties. The sp3-bonded content was measured and nano-mechanics properties were also tested. Results of atomic force microscopy and X-ray photoelectron spectroscopy show that the diamond films whose surface roughness is less than 10 nm and sp3-bonded content is greater than 70% can be prepared by bistratal filament structure with optimized proportion of Ar. It is also shown that the friction coefficient of diamond films is 0.13 and its wear-resistant property is excellent. Nano-mechanics of films shows that its elastic modulus is up to 650 MPa and hardness can reach higher than 60 GPa. The diamond films with excellent performance have a broad application prospect in microelectromechanical systems (MEMS).

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700