Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO4
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- 作者：Gao Shen 申高 ; Zuo-han Li 李祚涵 ; Ming Han 韩鸣
- 刊名：Optoelectronics Letters
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：12
- 期：6
- 页码：430-432
- 全文大小：400 KB
- 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Applied Optics, Optoelectronics and Optical Devices
Chinese Library of Science - 出版者：Tianjin University of Technology, co-published with Springer-Verlag GmbH
- ISSN：1993-5013
- 卷排序：12
文摘
Combining the self-stimulated Raman scattering technology and saturable absorber of Cr4+:YAG, a 1.17 μm c-cut Nd:GdVO4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.