Highly-ordered silicon inverted nanocone arrays with broadband light antireflectance

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• 作者：Dong Zhang (1)
  Weina Ren (2)
  Zhichao Zhu (2)
  Haifeng Zhang (2)
  Bo Liu (2)
  Wangzhou Shi (1)
  Xiaomei Qin (1)
  Chuanwei Cheng (2)
  
  1. Department of Physics ; Shanghai Normal University ; No.100 Guilin Road ; Shanghai ; 200234 ; PR China
  2. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering ; Tongji University ; 1239 Siping Road ; Shanghai ; 200092 ; PR China
  
• 关键词：Inverted nanocone arrays ; Antireflection ; Nanosphere lithography ; Si
• 刊名：Nanoscale Research Letters
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：10
• 期：1
• 全文大小：2,057 KB
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• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

In this work, highly-ordered silicon inverted nanocone arrays are fabricated by integration of nanosphere lithography with reactive ion etching (RIE) method. The optical characteristics of as-prepared Si inverted nanocone arrays are investigated both by experiments and simulations. It is found that the Si nanocone arrays present excellent broadband light antireflectance properties, which are attributed to the gradient in the effective refractive index of nanocones and enhanced light trapping owing to optical diffraction. The inverted Si nanocone arrays might find a variety of applications in solar cells and photodetectors.