Electronic instabilities and irradiation effects in the (TMTTF)2X series

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• 作者：Claude Coulon (1)
  Pascale Foury-Leylekian (2)
  Jean-Marc Fabre (3)
  Jean-Paul Pouget (2)
  
  1. Centre de Recherches Paul Pascal ; CNRS ; UPR CNRS 8641 ; Universit茅 Bordeaux ; 115 Avenue Dr. A. Schweitzer ; 33600 ; Pessac ; France
  2. Laboratoire de Physique des Solides ; Universit茅 Paris Sud ; CNRS ; UMR 8502 ; 91405 ; Orsay ; France
  3. Institut Charles Gerhardt Montpellier ; UMR 5253 CNRS-UM12-ENSCM-UM1 ; Architectures Mol茅culaires Mat茅riaux Nanostructur茅s ; 8 rue de l鈥櫭ヽole normale ; 34296 ; Montpellier Cedex 5 ; France
  
• 关键词：Solid State and Materials
• 刊名：The European Physical Journal B - Condensed Matter
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：88
• 期：4
• 全文大小：1,764 KB
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• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Physics
  Complexity
  Fluids
  Solid State Physics and Spectroscopy
  Superconductivity, Superfluidity and Quantum Fluids
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1434-6036

文摘

The paper presents a single-crystal ESR study of a series of pristine and X-ray irradiated (TMTTF)2X salts, where TMTTF is tetramethyltetrathiafulvalene and X is either a centro-symmetrical (SbF6 and Br) or a non-centro-symmetrical (ReO4, ClO4, BF4, SCN and NO3) monovalent anion. Besides standard line-width and spin-susceptibility measurements, the analysis of the asymmetry of the ESR line shape allows to obtain simultaneous information on the electrical conductivity. This whole set of data is used to determine the charge and spin gaps related to the charge ordering (CO) and anion ordering (AO) ground states and their evolution as a function of X-ray irradiation damages. We show in particular that the sensibility of (TMTTF)2X salts to irradiation depends upon the nature of the anion X and that the CO ground state is drastically affected by irradiation damages at the difference of the AO ground state. We also present evidence of a CO transition and of a decoupling between the AO transition and the opening of a spin gap in (TMTTF)2NO3.