Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

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• 作者：Suixing Shi (1)
  Zhi Zhang (2)
  Zhenyu Lu (1)
  Haibo Shu (3)
  Pingping Chen (1)
  Ning Li (1)
  Jin Zou (2) (4)
  Wei Lu (1)
  
  1. National Laboratory for Infrared Physics ; Shanghai Institute of Technical Physics ; Chinese Academy of Sciences ; 500 Yu Tian Road ; Shanghai ; 200083 ; China
  2. Materials Engineering ; The University of Queensland ; St. Lucia ; Brisbane ; QLD 4072 ; Australia
  3. College of Optical and Electronic Technology ; China Jiliang University ; Hangzhou ; China
  4. Center for Microscopy and Microanalysis ; The University of Queensland ; St. Lucia ; Brisbane ; QLD 4072 ; Australia
  
• 关键词：GaSb ; Heterostructure nanowire ; Core ; shell ; Wurtzite ; Molecular beam epitaxy ; 61.46.Km ; 81.07.Gf ; 68.37.Lp
• 刊名：Nanoscale Research Letters
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：10
• 期：1
• 全文大小：1,816 KB
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• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X

文摘

In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.