Influence of annealing on the structural, optical and electrical properties of indium oxide films deposited on c-sapphire substrate
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- 作者：Hong-duo Zhao 赵鸿铎 ; Wei Mi 弭伟 ; Kai-liang Zhang 张楷亮…
- 刊名：Optoelectronics Letters
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：12
- 期：1
- 页码：39-42
- 全文大小：563 KB
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Wei Mi 弭伟 (1)
Kai-liang Zhang 张楷亮 (1)
Jin-shi Zhao 赵金石 (1)
1. Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin, 300384, China - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Applied Optics, Optoelectronics and Optical Devices
Chinese Library of Science - 出版者：Tianjin University of Technology, co-published with Springer-Verlag GmbH
- ISSN：1993-5013
文摘
Indium oxide (In2O3) films were prepared on Al2O3 (0001) substrates at 700 °C by metal-organic chemical vapor deposition (MOCVD). Then the samples were annealed at 800 °C, 900 °C and 1 000 °C, respectively. The X-ray diffraction (XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment. Triangle or quadrangle grains can be observed, and the corner angle of the grains becomes smooth after annealing. The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm2·V-1·s-1. The average transmittance for the films in the visible range is over 90%. The optical band gaps of the samples are about 3.73 eV, 3.71 eV, 3.70 eV and 3.69 eV corresponding to the In2O3 films deposited at 700 °C and annealed at 800 °C, 900 °C and 1 000 °C, respectively. This work has been supported by the National Natural Science Foundation of China (Nos.61274113, 11204212 and 61404091), the Program for New Century Excellent Talents in University (No.NCET-11-1064), the Tianjin Natural Science Foundation (Nos.13JCYBJC15700, 13JCZDJC26100, 14JCZDJC31500 and 14JCQNJC00800), and the Tianjin Science and Technology Developmental Funds of Universities and Colleges (Nos.20100703, 20130701 and 20130702).