文摘
Using La(NO3)3·nH2O and Ni(CH3COO)2·4H2O as starting materials, the LaNiO3 sol was prepared with 2-methoxyethanol as solvent. Using this sol, (001)-oriented LNO films with high conductivity were prepared on LaAlO3 single crystal substrate by sol–gel method. Using barium acetate, strontium acetate, and Ti(OC4H9)4 as starting materials, acetylacetone and lactic acid as chemical modifiers, photosensitive BST sol was obtained. Using the BST sol, a-oriented BST films were prepared on (001)LNO/LAO. Due to the photosensitivity of the BST sol, the coated BST gel film itself can be used as photoresist. Thus, micro-patterned a-oriented BST films are obtained by exposing, leaching, and annealing the BST gel film. The a-oriented BST film capacitor on LNO/LAO has a high dielectric constant, a low dielectric loss and a low leakage current.