Periodic variation in the electroluminescence intensity on a single pattern from InGaN/GaN light-emitting diodes fabricated on lens-shaped patterns
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- 作者：Hye Min Oh (1)
Cheul-Ro Lee (1)
Jin Soo Kim (1)
Kihyun Pyun (2)
Kwang Jae Lee (3)
Mun Seok Jeong (4)
Yong Hwan Kim (4)
Jae-Young Leem (5)
Jae-Hyun Ryou (6)
1. Division of Advanced Materials Engineering ; Research Center of Advanced Materials Development ; Chonbuk National University ; Jeonju ; 561-756 ; Korea
2. Division of Computer Science and Engineering ; Chonbuk National University ; Jeonju ; 561-756 ; Korea
3. Gwangju Institute of Science and Technology ; Gwangju ; 500-712 ; Korea
4. Department of Energy Science ; Sungkyunkwan University ; Suwon ; 440-746 ; Korea
5. School of Nano-Engineering ; Inje University ; Gimhae ; 621-749 ; Korea
6. Department of Mechanical Engineering ; The University of Houston ; Houston ; TX ; 77204-4006 ; U.S.A. - 关键词：Light ; emitting diodes ; Lens ; shaped pattern ; Confocal scanning electroluminescence
- 刊名：Journal of the Korean Physical Society
- 出版年：2015
- 出版时间：January 2015
- 年：2015
- 卷：66
- 期：2
- 页码：266-269
- 全文大小：550 KB
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- 出版者：Springer Netherlands
- ISSN：1976-8524
文摘
We investigated the spatial distribution of light emission from InGaN/GaN light-emitting diodes (LEDs) fabricated on lens-shaped patterns (LSPs) by using confocal scanning electroluminescence microscopy (CSM). From three-dimensional CSM images measured by varying the position of the focal plane of a detector, the luminescence profiles from the InGaN/GaN LEDs were significantly changed with respect to the position of the LSP itself. In addition, it the EL intensity around the boundary region of the single LSP was found to fluctuate periodically with the distance of 671 nm between the adjacent bright patterns. From the simple theoretical analysis, the periodic fluctuation around the boundary of every single pattern in the CSM images is attributed to interference effects due to periodically-positioned LSPs.