Thin film solar cell based on lus-plus">p-CuSbS_lus-plus">2 together with Cd-free GaN/InGaN bilayer

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• 作者：Albert Daniel Saragih ; Dong-Hau Kuo&#8230
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：28
• 期：3
• 页码：2996-3003
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

CuSbS₂ thin film solar cell with 2.99 % efficiency has been demonstrated by using the Cd-free GaN and In_0.15Ga_0.85N as n-type semiconductor bilayer. CuSbS₂ films on the TiN-coated Mo/glass substrates were made by co-sputtering technique at 300 °C with a cermet target of (Cu + Sb₂S₃) operated at 50–60 W and a metal target of Cu at 2 W, followed by thermal annealing at 350–450 °C for 1 h. The effects of processing conditions on the growth behavior, microstructural characteristics, and electrical properties of CuSbS₂ films had been investigated. Solar cell devices were fabricated by depositing ~50 nm GaN and ~300 nm In_0.15Ga_0.85N layers with low temperature radio-frequency (RF) sputtering method, followed by RF sputtering 300–400 nm indium-tin oxide for front contact and pasting silver glue for electric contacts. The CuSbS₂ thin film sputtered at 55 W had a [Cu]/[Sb] ratio of 0.80 with co-exists of the Sb₂S₃, and had a hole concentration of 1.41 × 1018 cm−3, an electrical conductivity 0.1 S cm−1, and mobility of 13 cm2 V−1 s−1. The efficiency of the solar cell device had a 3.83-fold increase if the p-CuSbS₂/CdS/n-ZnO system had its conventionally designed CdS/n-type ZnO layer replaced by n-type GaN/In_0.15Ga_0.85N bilayer.