Preparation of Al doped ZnO thin films by MOCVD using ultrasonic atomization

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• 作者：C. H. Lee (1)
  D. W. Kim (1)
  
• 关键词：AZO ; Transparent conducting oxide (TCO) ; Thin films ; MOCVD
• 刊名：Journal of Electroceramics
• 出版年：2014
• 出版时间：October 2014
• 年：2014
• 卷：33
• 期：1-2
• 页码：12-16
• 全文大小：480 KB
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• 作者单位：C. H. Lee (1)
  D. W. Kim (1)
  
  1. Department of Materials Engineering, Keimyung University, Daegu, 704-701, South Korea
  
• ISSN：1573-8663

文摘

In this work, Al doped ZnO (AZO) thin films were deposited on soda lime glass substrates at 275?°C by MOCVD using ultrasonic atomization and the effects of Al doping concentration on the structural, electrical and optical properties of AZO films were investigated. Zinc acetylacetonate and aluminium acetylacetonate were used for the source precursors of Zn and Al, respectively. Al doping enhanced the [001] preferred orientation and crystallinity of films. The resistivity of AZO thin film was decreased with the increase of doping ratio up to 6?mol%. The lowest resistivity obtained in this experiment was about 6.0?×-0? Ω?·?cm. The average optical transmittance in the visible wave length range was over 90?% for all of the films regardless of doping concentration. The optical band gap of AZO thin films was increased with the increase of Al doping concentration.