Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

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• 作者：He-Jie Zhu ; Yan Liang ; Xiao-Yong Gao ; Rui-Fang Guo…
• 关键词：ZnS films ; Chemical bath deposition ; Optical properties ; Aluminum doping
• 刊名：Brazilian Journal of Physics
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：45
• 期：3
• 页码：308-313
• 全文大小：1,424 KB
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• 作者单位：He-Jie Zhu (1)
  Yan Liang (2)
  Xiao-Yong Gao (1)
  Rui-Fang Guo (1)
  Qiang-Min Ji (1)
  
  1. Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450052, China
  2. College of Information Science and Engineering, Henan University of Technology, Zhengzhou, 450001, China
  
• 刊物类别：Physics and Astronomy
• 出版者：Springer New York
• ISSN：1678-4448

文摘

Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ?35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.