Modeling the concentration profiles of aluminum and indium impurities in crystals of germanium–silicon solid solutions
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- 作者：Z. A. Agamaliev ; Z. M. Zakhrabekova ; V. K. Kyazimova…
- 关键词：controlled doping ; semiconductor materials
- 刊名：Inorganic Materials
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：52
- 期：3
- 页码：244-247
- 全文大小：513 KB
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19.Azhdarov, P.G. and Agaev, N.A., Component distribution in Ge–Si crystals grown from the melt, Inorg. Mater., 1999, vol. 35, no. 8, pp. 763–765. - 作者单位：Z. A. Agamaliev (1)
Z. M. Zakhrabekova (1)
V. K. Kyazimova (1)
G. Kh. Azhdarov (1)
1. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, Baku, AZ1143, Azerbaijan - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Inorganic Chemistry
Industrial Chemistry and Chemical Engineering
Materials Science
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1608-3172
文摘
A one-dimensional problem of the axial distribution of Al and In impurities in uniform crystals of Ge–Si solid solutions grown by double feeding of the melt method has been solved in the Pfann approximation. The mathematical modeling results suggest that the impurity concentration profile in Ge–Si crystals of constant composition can be varied in a wide range through appropriate changes in the relationship between the crystal growth rate and the rates of feeding the melt using germanium and silicon rods. We demonstrate the possibility of growing completely homogeneous Ge–Si kAl,Inl crystals, in terms of both the concentrations of their major components and the impurity concentration profile.