Increase in open circuit voltage by the incorporation of band gap engineered FeS2 nanoparticle within MEHPPV solar cell

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• 作者：Animesh Layek ; Somnath Middya…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2013
• 出版时间：October 2013
• 年：2013
• 卷：24
• 期：10
• 页码：3749-3755
• 全文大小：585KB
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• 作者单位：Animesh Layek (1)
  Somnath Middya (1)
  Partha Pratim Ray (1)
  
  1. Department of Physics, Jadavpur University, Kolkata, 700 032, India
  
• ISSN：1573-482X

文摘

In this study we have synthesized and characterized FeS2 nanoparticles with larger optical band gap (3.19?eV) and high thermal stability by hydrothermal route with capping reagent PEG 400. This high quality FeS2 nanoparticle with higher band gap energy was applied as semiconducting acceptor in MEHPPV:FeS2 nanoparticle based hybrid solar cells to improve the open circuit voltage. Variations in the property of FeS2 have been done and confirmed by XRD, FE-SEM, TEM, FTIR, TGA, UV–VIS spectroscopy and Raman study. Two types of solar cells have been fabricated with structures: ITO/PEDOT:PSS/MEHPPV/Al and ITO/PEDOT:PSS/MEHPPV:FeS2/Al. The open circuit voltage has been increased from 0.64 to 0.72?V by compositing FeS2 nanoparticle within MEHPPV matrix.