Study of the Electrical Properties and the Internal Quantum Efficiency of SnO₂-p/n- Si Thin Film Solar Cells

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• 作者：A. A. El-Amin
• 关键词：Electrical Properties ; SnO2 ; p/n ; Si Solar Cells ; Antireflection Coating ; Vacuum evaporation technique ; Internal Quantum Efficiency
• 刊名：SILICON
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：9
• 期：1
• 页码：47-51
• 全文大小：442 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Inorganic Chemistry
  Materials Science
  Organic Chemistry
  Polymer Sciences
  Biomedical Engineering
  Nanotechnology
  
• 出版者：Springer Netherlands
• ISSN：1876-9918
• 卷排序：9

文摘

SnO₂-p/n-Si thin film solar cells were prepared by a vacuum evaporation technique, and SnO₂ studied as a transparent antireflection coating with the n–type silicon wafer to fabricate a thin film. The oxidation of the Si surface takes place simultaneously with the evaporation process. Dark forward and reverse I-V characteristics for the SnO₂–p/n-Si structure in the temperature range (25–300 °C), for a thickness of 5000 Å are measured. The illuminated current-voltage characteristics of a PN junction solar cell have been investigated. The capacitance-voltage (C–V) measurements at room temperature are carried out to show the variation of capacitance with frequency. The relative IQE for the fabricated SnO₂–p/n-Si structure with 5000 Å thickness at 300 °C are calculated. The fabricated structure has a maximum response at a wavelength in the range, 0.8–1.05 μm.