Metamorphic distributed Bragg reflectors for the 1440-600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures
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- 作者：A. Yu. Egorov ; L. Ya. Karachinsky ; I. I. Novikov ; A. V. Babichev…
- 刊名：Semiconductors
- 出版年：2015
- 出版时间：October 2015
- 年：2015
- 卷：49
- 期：10
- 页码：1388-1392
- 全文大小：520 KB
- 参考文献：1.A. Leuther, A. Tessmann, I. Kallfass, H. Massler, R. Loesch, M. Schlechtweg, M. Mikulla, and O. Ambacher, in Proceedings of the Conference on Indium Phosphide and Related Materials IPRM (2010), p. 1
1.G. Ng, K. Radhakrishnan, and H. Wang, in Proceedings of the European Symposium on Gallium Arsenide and Other Semiconductor Application EGAAS2005 (2005).
2.F. Capotondi, G. Biasiol, I. Vobornik, L. Sorba, F. Giazotto, A. Cavallini, and B. Fraboni, J. Vac. Sci. Technol. B 22, 702 (2004).CrossRef
3.G. B. Galiev, S. S. Pushkarev, I. S. Vasil’evskii, E. A. Klimov, and R. M. Imamov, Semiconductors 47, 997 (2013).CrossRef ADS
4.L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil’ev, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg, Semiconductors 39, 1415 (2005).CrossRef ADS
5.T. Kettler, L. Y. Karachinsky, N. N. Ledentsov, V. A. Shchukin, G. Fiol, M. Kuntz, A. Lochmann, O. Schulz, L. Reissmann, K. Posilovic, D. Bimberg, I. I. Novikov, Yu. M. Shernyakov, N. Yu. Gordeev, M. V. Maximov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil’ev, V. M. Ustinov, and A. R. Kovsh, Appl. Phys. Lett. 89, 041113 (2006).CrossRef ADS
6.D. A. Louderback, M. A. Fish, J. F. Klem, D. K. Serkland, K. D. Choquette, G. W. Pickrell, R. V. Stone, and P. S. Guilfoyle, IEEE Photon. Technol. Lett. 16, 963 (2004).CrossRef ADS
7.A. Yue, K. Shen, R. Wang, and J. Shi, IEEE Photon. Lett. 16, 717 (2004).CrossRef ADS
8.G. Steinle, H. Riechert, and A. Y. Egorov, Electron. Lett. 37, 93 (2001)CrossRef
8.G. Steinle, F. Mederer, M. Kicherer, R. Michalzik, G. Kristen, A. Y. Egorov, H. Riechert, H. D. Wolf, and K. J. Ebeling, Electron. Lett. 37, 632 (2001).CrossRef
9.M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schafer, F. Hohnsdorf, J. Koch, W. Stolz, S.W. Koch, W. W. Ruhle, J. Hader, J. V. Moloney, E. P. O’Reilly, B. Borchert, A. Yu. Egorov, and H. Riechert, Appl. Phys. Lett. 78, 3009 (2001)CrossRef ADS
9.M. R. Hofmann, N. Gerhardt, A. M. Wagner, C. Ellmers, F. Hohnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Ruhle, J. Hader, J. V. Moloney, E. P. O’Reilly, B. Borchert, A. Y. Egorov, H. Riechert, H. C. Schneider, and W. W. Chow, IEEE J. Quantum Electron. 38, 213 (2002).CrossRef ADS
10.F. Quochi, J. E. Cunningham, M. Dinu, and J. Shah, Electron. Lett. 36, 2075 (2000).CrossRef
11.E. Soderberg, J. S. Gustavsson, P. Modh, A. Larsson, Z. Zhang, J. Berggren, and M. Hammar, J. Lightwave Technol. 25, 2791 (2007).CrossRef ADS
12.A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov, Semiconductors 37, 1411 (2003).CrossRef ADS
13.N. N. Ledentsov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, E. S. Semenova, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, V. M. Ustinov, and D. Bimberg, Electron. Lett. 39, 1126 (2003).CrossRef
14.L. Y. Karachinsky, T. Kettler, N. Y. Gordeev, I. I. Novikov, M. V. Maximov, Y. M. Shernyakov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil’ev, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg, Electron. Lett. 41, 478 (2005).CrossRef
15.D. Ellafi, V. Iakovlev, A. Sirbu, G. Suruceanu, Z. Mickovic, A. Caliman, A. Mereuta, and E. Kapon, Opt. Express 22, 32180 (2014).CrossRef ADS
16.T. Czyszanowski, N. Volet, J. Walczak, M. Dems, R. Sarzala, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, and E. Kapon, IEEE J. Quantum Electron. 50, 732 (2014).CrossRef ADS
17.A. Syrbu, V. Iakovlev, A. Caliman, P. Royo, and E. Kapon, in Proceedings of the Optical Fiber Communication Conference, California, USA, February, 2008, p. OThS2.
18.C. Gierl, T. Grundl, S. Paul, K. Zogal, M. T. Haidar, P. Meissner, M.-C. Amann, and F. Kuppers, Opt. Express 22, 13063 (2014).CrossRef ADS
19.S. Spiga, C. Xie, P. Dong, M. C. Amann, and P. Winzer, in Proceedings of the 16th International Conference on Transparent Optical Networks (ICTON), Graz, Austria, July, 2014, p. 1.
20.C. Grasse, M. Mueller, T. Gruendl, G. Boehm, E. Roenneberg, P. Wiecha, J. Rosskopf, M. Ortsiefer, R. Meyer, and M. C. Amann, J. Cryst. Growth 370, 217 (2013).CrossRef ADS
21.M. Ortsiefer, J. Rosskopf, B. Kogel, A. Daly, M. Gorblich, Y. Xu, C. Greus, and C. Neumeyr, in Proceedings of the Semiconductor Laser Conference (ISLC), Palma de Mallorca, Spain, 2014, p. 74.
22.A. R. Clawson, Mater. Sci. Eng. R: Rep. 31, 1 (2001).CrossRef - 作者单位：A. Yu. Egorov (1) (2) (3)
L. Ya. Karachinsky (1) (2) (3)
I. I. Novikov (1) (2) (3)
A. V. Babichev (1) (2) (3) (4)
T. N. Berezovskaya (4)
V. N. Nevedomskiy (1)
1. Ioffe Institute, St. Petersburg, 194021, Russia
2. ITMO University, St. Petersburg, 197101, Russia
3. Connector Optics LLC, St. Petersburg, 194292, Russia
4. Saint Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, 194021, Russia - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Magnetism and Magnetic Materials
Electromagnetism, Optics and Lasers
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1090-6479
文摘
It is shown that metamorphic In0.3Ga0.7As/In0.3Al0.7As distributed Bragg reflectors (DBRs) with a reflection band at 1440-600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction. Original Russian Text ? A.Yu. Egorov, L.Ya. Karachinsky, I.I. Novikov, A.V. Babichev, T.N. Berezovskaya, V.N. Nevedomskiy, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 10, pp. 1434-438.