A Model Describing the Band Gap Energy of the Strained In x Ga1−x N y Sb z As1−
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- 作者：Chuan-Zhen Zhao ; Qiang Fu ; Tong Wei ; Sha-Sha Wang…
- 关键词：InGaNAsSb ; N level ; band gap energy ; dilute nitride
- 刊名：Journal of Electronic Materials
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：46
- 期：3
- 页码：1546-1551
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
- 出版者：Springer US
- ISSN：1543-186X
- 卷排序：46
文摘
The physical mechanism for the band gap evolution of the strained InxGa1−xNySbzAs1−y−z alloy is investigated. It is found that InxGa1−xNySbzAs1−y−z alloy with small N and Sb contents can be considered as an alloy formed by adding N and Sb atoms in the host material InxGa1−xAs. Under this condition, the band gap evolution of InxGa1−xNySbzAs1−y−z is due to three factors. One is the intraband coupling interactions within the conduction band and separately within the valence band of the host material, another is the coupling interaction between the Sb level and the Г valence band maximum of the host material, and the other is the coupling interaction between the N level and the Г conduction band minimum of the host material. Based on the physical mechanism for the band gap evolution of InxGa1−xNySbzAs1−y−z, a model is developed. The model can describe the band gap energy of the strained InxGa1−xNySbzAs1−y−z alloy well.