Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films
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- 作者：Sushil Kumar Pandey (1)
Saurabh Kumar Pandey (1)
C. Mukherjee (2)
P. Mishra (3)
M. Gupta (4)
S. R. Barman (4)
S. W. D’Souza (4)
Shaibal Mukherjee (1) - 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2013
- 出版时间：July 2013
- 年：2013
- 卷：24
- 期：7
- 页码：2541-2547
- 全文大小：486KB
- 参考文献：1. D.C. Look, Mater. Sci. Eng.
2. D.C. Reynolds, D.C. Look, B. Jogai, Solid State Commun.
3. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Prog. Mater Sci.
4. D.C. Look, G.M. Renlund, R.H. Burgeber II, J.R. Sizelove, Appl. Phys. Lett.
5. T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, M. Kawasaki, Appl. Phys. Lett.
6. S.J. Pearton, C.R. Abernathy, M.E. Overberg, G.T. Thaler, D.P. Norton, J. Appl. Phys.
7. D.C. Look, D.C. Reynolds, J.R. Sizelove, R.L. Jones, C.W. Litton, G. Cantwell, W.C. Harsch, Solid State Commun.
8. C.G. Van de Walle, Phys. Rev. Lett.
9. E.G. Bylander, J. Appl. Phys.
10. K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, J.A. Voiget, Appl. Phys. Lett.
11. M. Liu, A.H. Kitai, P. Mascher, J. Lumin.
12. B. Lin, Z. Fu, Y. Zia, Appl. Phys. Lett.
13. Yu. Chang-Feng, Che-Wei Sung, Sy-Hann Chen, Shih-Jye Sun, Appl. Surf. Sci.
14. B.J. Jina, H.S. Woo, S. Im, S.H. Bae, S.Y. Lee, Appl. Surf. Sci.
15. Jun-Liang Zhao, Xiao-Min Li, Ji-Ming Bian, Wei-Dong Yu, Xiang-Dong Gao, J. Cryst. Growth
16. J. Lee, W. Gao, Z. Li, M. Hodgson, J. Metson, H. Gong, U. Pal, Appl. Phys. A
17. B.J. Jin, S.H. Bae, S.Y. Lee, S. Im, Mater. Sci. Eng., B
18. S.K. Pandey, S. K. Pandey, S. Mukherjee, Design and growth optimization by dual ion beam sputtering of ZnO-based high-efficiency multiple quantum well green light emitting diode, 5th IEEE International Nanoelectronics Conference, IEEE INEC 2013, Singapore (2013)
19. American Standard for Testing of Materials (ASTM) 36-451
20. R. Kumar, N. Khare, V. Kumar, G.L. Bhalla, Appl. Surf. Sci.
21. B.D. Cullity, / Elements of X-ray diffraction, 2nd edn. (Addison-Wesley, Reading, MA, 1979)
22. Y.J. Kim, Y.T. Kim, H.K. Yang, J.C. Park, I. Han, Y.E. Lee, H.J. Kim, Vac. Sci. Technol.
23. J.P. Zhang, L.D. Zhang, L.Q. Zhu, Y. Zhang, M. Liu, X.J. Wang, J. Appl. Phys.
24. K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Trallant, J. Caruso, M.J. Hampden-Smith, T.T. Kodas, J. Lumin.
25. F.H. Leiter, H.R. Alves, A. Hofstaetter, D.M. Hofmann, B.K. Meyer, Phys. Stat. Sol. B
26. F.A. Kroger, H.J. Vink, J. Chem. Phys.
27. S.A. Studenikin, N. Golego, M. Cocivera, J. Appl. Phys.
28. K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Trallant, J.A. Voigt, J. Appl. Phys.
29. T. Sekiguchi, N. Ohashi, Y. Terada, Jpn. J. Appl. Phys.
30. C.G. Van de Walle, Phys. Rev. Lett.
31. E.V. Lavrov, J. Weber, F. Borrnert, C.G. Van de Wall, R. Helbig, Phys. Rev. B
32. Z.W. Liu, C.K. Ong, Appl. Phys. Lett.
33. T.P. Rao, M.C.S. Kumar, A. Safarulla, V. Ganesan, S.R. Barman, C. Sanjeeviraja, Phys. B
34. M.N. Islam, T.B. Ghosh, K.L. Chopra, H.N. Acharya, Thin Solid Films
35. H.B. Fan, S.Y. Yang, P.F. Zhang, H.Y. Wei, X.L. Liu, C.M. Jiao, Q.S. Zhu, Y.H. Chen, Z.G. Wang, Chin. Phys. Lett.
36. S.H.K. Park, C.S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J.I. Lee, M.S. Oh, S. Im, Adv. Mater. - 作者单位：Sushil Kumar Pandey (1)
Saurabh Kumar Pandey (1)
C. Mukherjee (2)
P. Mishra (3)
M. Gupta (4)
S. R. Barman (4)
S. W. D’Souza (4)
Shaibal Mukherjee (1)
1. Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical Engineering, Indian Institute of Technology, Indore, 453441, India
2. Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India
3. Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India
4. UGC DAE Consortium for Scientific Research, Indore, India - ISSN：1573-482X
文摘
ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600?°C at constant oxygen percentage O2/(O2?+?Ar)?% of 66.67?% in a mixed gas of Ar and O2 with constant chamber pressure of 2.75?×?10? mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be ?.32?×?1010?dyne/cm2 from ZnO film grown at 200?°C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375?nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600?°C. The minimum FWHM of the NBE peak of 16.76?nm was achieved at 600?°C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400?°C. The ZnO thin film was found to be highly resistive when grown at 100?°C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500?°C and again increased for film grown at 600?°C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.