Fabrication and electrical characterization of Al/DNA-CTMA/p-type a-Si:H photodiode based on DNA-CTMA biomaterial
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- 作者：M. Siva Pratap Reddy ; Peddathimula Puneetha…
- 关键词：p ; type a ; Si ; H ; DNA ; transient photocurrent ; frequency dependent
- 刊名：Electronic Materials Letters
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：13
- 期：1
- 页码：9-15
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Condensed Matter Physics; Nanotechnology and Microengineering; Characterization and Evaluation of Materials; Nanotechnology;
- 出版者：The Korean Institute of Metals and Materials
- ISSN：2093-6788
- 卷排序：13
文摘
In this work, a deoxyribonucleic acid-cetyltrimethylammonium chloride (DNA-CTMA) biomaterial based p-type hydrogenated amorphous silicon (a-Si:H) photodiode (PD) is fabricated and its electrical characteristics are investigated. The Al/DNA-CTMA/p-type a-Si:H PD parameters are studied using current-voltage (I-V), capacitancevoltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) measurements. The barrier height and the ideality factor of the diode are found to be 0.78 eV and 1.9, respectively. The electrical and photoconductivity properties of the diode are analyzed by using dark I-V and transient photocurrent techniques. The C-V-f and G/ω-V-f measurements indicate that the capacitance and conductance of the diode depend on the voltage and frequency, respectively. The experimental results reveal that the decreases in capacitance and the increases in conductance with an increase in frequency can be explained on the basis of interface states (NSS). Series resistance (RS) measurements are performed on the diode and discussed here. The obtained electrical parameters confirm that the Al/DNA-CTMA/p-type a-Si:H PD can be used as an optical sensor for the development of commercial applications that are environmentally benign.