Comparative study of global warming effects during silicon nitride etching using C3F6O/O2 and C3F6/O2 gas mixtures

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• 作者：Ka Youn Kim (1)
  Hock Key Moon (1)
  Nae-Eung Lee (1)
  Bo Han Hong (2)
  Soo Ho Oh (2)
  
  1. Department of Advanced Materials Science & Engineering ; Sungkyunkwan University ; Suwon ; 440-746 ; Korea
  2. WONIK IPS Ltd ; Pyeongtaek ; 451-862 ; Korea
  
• 关键词：capacitive coupled plasma ; etching ; silicon nitride (Si3N4) ; global warming ; perfluorcompound ; display
• 刊名：Electronic Materials Letters
• 出版年：2015
• 出版时间：January 2015
• 年：2015
• 卷：11
• 期：1
• 页码：93-99
• 全文大小：811 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

C3F6 and C3F6 gases were investigated as replacement gases for SF6 used in display industry due to their low global warming potential and short lifetime. In the C3F6/O2 and C3F6/O2 capacitively coupled plasmas, Si3N4 etch conditions were varied by controlling process parameters. The global warming effects were quantified as million metric ton carbon equivalents (MMTCEs) obtained from the volumetric emission of by-product and etch gases. A lower MMTCE value and higher etch rate process with combination of high and low source frequencies, f HF (27.12 MHz)/f LF (2 MHz), were observed for the C3F6/O2 chemistry than for the C3F6/O2 chemistry.