Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

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• 作者：T. L. R. Brien ; P. A. R. Ade ; P. S. Barry…
• 刊名：Journal of Low Temperature Physics
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：184
• 期：1-2
• 页码：231-237
• 全文大小：688 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Characterization and Evaluation Materials
  Magnetism and Magnetic Materials
  
• 出版者：Springer Netherlands
• ISSN：1573-7357
• 卷排序：184

文摘

We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (\(32\,\times \,14~\mathrm {\upmu m}\)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of \(3.0 \times 10^{-16}\) and \(6.6 \times 10^{-17}~\mathrm {W\,Hz^{{-1}/{2}}}\) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.Information on how to access all data supporting the results in this article can found at Cardiff University data catalogue at doi:10.17035/d.2016.0008254680.