Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates

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• 作者：Cristina Chirila (1)
  Andra Georgia Boni (1) (4)
  Iuliana Pasuk (1)
  Raluca Negrea (1)
  Lucian Trupina (1)
  Gwenael Le Rhun (2)
  Shi Yin (2) (3)
  Bertrand Vilquin (3)
  Ioana Pintilie (1)
  Lucian Pintilie (1)
  
  1. National Institute of Materials Physics ; Atomistilor 105bis ; 77125 ; Magurele ; Ilfov ; Romania
  4. Faculty of Physics ; University of Bucharest ; 077125 ; Magurele ; Romania
  2. CEA ; LETI ; MINATEC Campus ; 17 rue des Martyrs ; 38054 ; Grenoble Cedex 9 ; France
  3. INL ; CNRS UMR5270 ; Ecole Centrale de Lyon ; Universit茅 de Lyon ; 36 avenue Guy de Collongue ; 69134 ; Ecully Cedex ; France
  
• 刊名：Journal of Materials Science
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：50
• 期：11
• 页码：3883-3894
• 全文大小：5,618 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Characterization and Evaluation Materials
  Polymer Sciences
  Continuum Mechanics and Mechanics of Materials
  Crystallography
  Mechanics
  
• 出版者：Springer Netherlands
• ISSN：1573-4803

文摘

Ferroelectric/electric properties of PbZr0.52Ti0.48O3 (PZT) thin films grown by pulsed laser deposition (PLD) on two different substrates, Si (001) and SrTiO3 (STO) (001), were comparatively analyzed. The structural characterization has revealed the epitaxial relationship between the grown layers and the two types of substrates, with larger density of structural defects for the films deposited on Si (001) with buffer STO layer. The ferroelectric/electric properties are also different, with lower remnant polarization (about half of the value obtained on STO substrate), higher dielectric constant (about two times larger), and lower leakage current (about two orders of magnitude lower) for the PZT films deposited on Si (001) compared to those deposited on (001) STO substrates. Nevertheless, the results show that the use of a STO buffer layer on Si can be a solution to obtain good quality PZT capacitor structures without using expensive single-crystal oxide substrates. In this way, applications based on PZT capacitors (e.g. non-volatile memories, pyroelectric detectors, light switches, etc.) would be more easily integrated directly on Si wafers.