Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

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• 作者：I. S. Virt ; I. O. Rudyi ; I. Ye. Lopatynskyi ; Yu. Dubov…
• 关键词：Lead chalcogenides ; film structure ; pulsed laser deposition
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：46
• 期：1
• 页码：175-181
• 全文大小：1528KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al₂O₃) and on Si covered with a Si₃N₄ buffer layer. The Si₃N₄ layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si₃N₄ was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.