Morphology and gas sensing characteristics of density-controlled CuO nanostructures obtained by varying the oxygen partial pressure during growth
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- 作者：Dongjin Lee ; Changhyun Jin ; Youngwook Noh…
- 刊名：Journal of the Korean Physical Society
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：69
- 期：1
- 页码：45-51
- 全文大小：2,766 KB
- 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
- 出版者：Springer Netherlands
- ISSN：1976-8524
- 卷排序：69
文摘
By exerting different O2 partial pressures (0, 20, 40, and 60 sccm) onto copper substrates, we discovered that the growth parameter, namely, the O2 flow rate, affects the degree of nucleation, diameter, length, and crystalline quality of CuO nanowires (NWs). Scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM) were used to analyze the evolution of the morphological and the microstructural changes in the CuO nanostructures. The formation of a Cu2O interlayer between the Cu and the CuO layers could be adjusted by controlling more precisely the O2 flow rate. In addition, the reducing (H2S) and the oxidizing (O2, NO2, and SO2) gas sensing performances of these O2-assisted CuO NWs were compared with those of CuO NWs grown in static air. The response to the reducing H2S of the sensors based on CuO NWs grown using O2 at 40 sccm showed a higher electrical change and faster response and recovery times than the sensors based on CuO NWs grown using lower O2 flow rates, including the ones grown in static air and/or used for sensing oxidizing gases (O2, NO2, and SO2) did. On the basis of their growth and their gas-sensing applications, the possible mechanisms characteristic of the density-controlled CuO NWs grown using various O2 partial pressures are discussed.KeywordsNanostructuresGrowth from vaporNanomaterialsSemiconducting material