Enhancement of photoresponsive electrical characteristics of multilayer MoS2 transistors using rubrene patches

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• 作者：Eun Hei Cho (1)
  Won Geun Song (2)
  Cheol Joon Park (1)
  Jeongyong Kim (3)
  Sunkook Kim (2)
  Jinsoo Joo (1)
  
  1. Department of Physics ; Korea University ; Seoul ; 136-713 ; R. O. Korea
  2. Department of Electronics and Radio Engineering Institute for Laser Engineering ; Kyung Hee University ; Yongin ; Gyeonggi-do ; 446-701 ; R. O. Korea
  3. Center for Integrated Nanostructure Physics (CINAP) ; Institute for Basic Science (IBS) ; Department of Energy Science ; Sungkyunkwan University ; Suwon ; 440-746 ; R. O. Korea
  
• 关键词：MoS2 ; rubrene ; transistor ; photoresponsivity ; charge transfer
• 刊名：Nano Research
• 出版年：2015
• 出版时间：March 2015
• 年：2015
• 卷：8
• 期：3
• 页码：790-800
• 全文大小：2,509 KB
• 参考文献：1. Geim, A K, Novoselov, K S (2007) The rise of graphene. Nat. Mater. 6: pp. 183-191 CrossRef
  2. Novoselov, K S, Geim, A K, Morozov, S V, Jiang, D, Zhang, Y, Dubonos, S V, Grigorieva, I V, Firsov, A A (2004) Electric field effect in atomically thin carbon films. Science 306: pp. 666-669 CrossRef
  3. Novoselov, K S, Geim, A K, Morozov, S V, Jiang, D, Katsnelson, M I, Grigorieva, I V, Dubonos, S V, Firsov, A A (2005) Two-dimensional gas of massless Dirac fermions in graphene. Nature 438: pp. 197-200 CrossRef
  4. Radisavljevic, B, Radenovic, A, Brivio, J, Giacometti, V, Kis, A (2011) Single-layer MoS2 transistors. Nat. Nanotechnol. 6: pp. 147-150 CrossRef
  5. Lembke, D, Kis, A (2012) Breakdown of high-performance monolayer MoS2 transistors. ACS Nano 6: pp. 10070-10075 CrossRef
  6. Wang, H, Yu, L, Lee, Y H, Shi, Y, Hsu, A, Chin, M L, Li, L J, Dubey, M, Kong, J, Palacios, T (2012) Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12: pp. 4674-4680 CrossRef
  7. Brivio, J, Alexander, D T L, Kis, A (2011) Ripples and layers in ultrathin MoS2 membranes. Nano Lett. 11: pp. 5148-5153 CrossRef
  8. Li, H, Yin, Z, He, Q, Li, H, Huang, X, Lu, G, Fam, D W H, Tok, A I Y, Zhang, Q, Zhang, H (2012) Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small 8: pp. 63-67 CrossRef
  9. Perkins, F K, Friedman, A L, Cobas, E, Campbell, P M, Jernigan, G G, Jonker, B T (2013) Chemical vapor sensing with monolayer MoS2. Nano Lett. 13: pp. 668-673 CrossRef
  10. Gourmelon, E, Lignier, O, Hadouda, H, Couturier, G, Bern猫de, J C, Tedd, J, Pouzet, J, Salardenne, J (1997) MS2 (M = W, Mo) photosensitive thin films for solar cells. Sol. Energy Mater. Sol. Cells 46: pp. 115-121 CrossRef
  11. Buscema, M, Barkelid, M, Zwiller, V, Zant, H S J, Steele, G A, Castellanos-Gomez, A (2013) Large and tunable photothermoelectric effect in single-layer MoS2. Nano Lett. 13: pp. 358-363 CrossRef
  12. Mak, K F, Lee, C, Hone, J, Shan, J, Heinz, T F (2010) Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105: pp. 136805 CrossRef
  13. Ghatak, S, Pal, A N, Ghosh, A (2011) Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano 5: pp. 7707-7712 CrossRef
  14. Kim, S, Konar, A, Hwang, W S, Lee, J H, Lee, J, Yang, J, Jung, C, Kim, H, Yoo, J B, Choi, J Y (2012) High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 3: pp. 1011 CrossRef
  15. Sreeprasad, T S, Nguyen, P, Kim, N, Berry, V (2013) Controlled, defect-guided, metal-nanoparticle incorporation onto MoS2 via chemical and microwave routes: Electrical, thermal, and structural properties. Nano Lett. 13: pp. 4434-4441 CrossRef
  16. Choi, W, Cho, M Y, Konar, A, Lee, J H, Cha, G B, Hong, S C, Kim, S, Kim, J, Jena, D, Joo, J (2012) High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared. Adv. Mater. 24: pp. 5832-5836 CrossRef
  17. Lopez-Sanchez, O, Lembke, D, Kayci, M, Radenovic, A, Kis, A (2013) Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 8: pp. 497-501 CrossRef
  18. Lin, M W, Liu, L, Lan, Q, Tan, X, Dhindsa, K S, Zeng, P, Naik, V M, Cheng, M M C, Zhou, Z (2012) Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte. J. Phys. D: Appl. Phys. 45: pp. 345102 CrossRef
  19. Cho, M Y, Kim, S J, Han, Y D, Park, D H, Kim, K H, Choi, D H, Joo, J (2012) Highly sensitive, photocontrolled, organic thin-film transistors using soluble star-shaped conjugated molecules. Adv. Funct. Mater. 18: pp. 2905-2912 CrossRef
  20. Kang, H S, Lee, J W, Kim, M K, Joo, J, Ko, J M, Lee, J Y (2006) Electrical characteristics of pentacene-based thin film transistor with conducting poly(3,4-ethylenedioxythiophene) electrodes. J. Appl. Phys. 100: pp. 064508 CrossRef
  21. Cho, E H, Kim, B G, Jun, S, Lee, J, Park, D H, Lee, K S, Kim, J, Kim, J, Joo, J (2014) Remote biosensing with polychromatic optical waveguide using blue light-emitting organic nanowires hybridized with quantum dots. Adv. Funct. Mater. 24: pp. 3684-3691 CrossRef
  22. Peumans, P, Uchida, S, Forrest, S R (2003) Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films. Nature 425: pp. 158-162 CrossRef
  23. Gommans, H, Schols, S, Kadashchuk, A, Heremans, P, Meskers, S C J (2009) Exciton diffusion length and lifetime in subphthalocyanine films. J. Phys. Chem. C 113: pp. 2974-2979 CrossRef
  24. M枚nch, W (1998) Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states. Appl. Phys. Lett. 72: pp. 1899 CrossRef
  25. Sillen, A, Engelborghs, Y (1998) The correct use of 鈥渁verage鈥?fluorescence parameters. Photochem. Photobiol. 67: pp. 475-486 CrossRef
  26. Najafov, H, Lee, B, Zhou, Q, Feldman, L C, Podzorov, V (2010) Observation of long-range exciton diffusion in highly ordered organic semiconductors. Nat. Mater. 9: pp. 938-943 CrossRef
  27. M眉ller, A M, Avlasevich, Y S, M眉llen, K, Bardeen, C J (2006) Evidence for exciton fission and fusion in a covalently linked tetracene dimer. Chem. Phys. Lett. 421: pp. 518-522 CrossRef
  28. Kim, J H, Yun, S W, An, B K, Han, Y D, Yoon, S J, Joo, J, Park, S Y (2013) Remarkable mobility increase and threshold voltage reduction in organic field-effect transistors by overlaying discontinuous nano-patches of charge-transfer doping layer on top of semiconducting film. Adv. Mater. 25: pp. 719-724 CrossRef
  29. Walzer, K, Maennig, B, Pfeiffer, M, Leo, K (2007) Highly efficient organic devices based on electrically doped transport layers. Chem. Rev. 107: pp. 1233-1271 CrossRef
  30. Qi, Y, Sajoto, T, Kr枚ger, M, Kandabarow, A M, Park, W, Barlow, S, Kim, E G, Wielunski, L, Feldman, L C, Bartynski, R A (2009) A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation. Chem. Mater. 22: pp. 524-531 CrossRef
  31. Shi, Y, Huang, J K, Jin, L, Hsu, Y T, Yu, S F, Li, L J, Yang, H Y (2013) Selective decoration of Au nanoparticles on monolayer MoS2 single crystals. Sci. Rep. 3: pp. 1839
  32. Liu, H, Neal, A T, Ye, P D (2012) Channel length scaling of MoS2 MOSFETs. ACS Nano 6: pp. 8563-8569 CrossRef
  33. Perera, M M, Lin, M W, Chuang, H J, Chamlagain, B P, Wang, C, Tan, X, Cheng, M M C, Tom谩nek, D, Zhou, Z (2013) Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating. ACS Nano 7: pp. 4449-4458 CrossRef
  34. Late, D J, Liu, B, Matte, H S S R, Dravid, V P, Rao, C N R (2006) Hysteresis in single-layer MoS2 field effect transistors. ACS Nano 6: pp. 5635-5641 CrossRef
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000

文摘

Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements.