Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures
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- 作者：N. Tuğluoğlu ; H. Koralay ; K. B. Akgül ; Ş. Çavdar
- 关键词：Schottky structure ; Current–voltage ; Barrier height ; Ideality factor ; Series resistance ; Interface state density ; 73.40.Sx ; 85.30.Hi ; 85.30.Kk
- 刊名：Indian Journal of Physics
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：90
- 期：1
- 页码：43-48
- 全文大小：773 KB
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H. Koralay (2)
K. B. Akgül (2)
Ş. Çavdar (2)
1. Department of Energy Systems Engineering, Engineering Faculty, Giresun University, Güre Campus, 28200, Giresun, Turkey
2. Department of Physics, Faculty of Science, Gazi University, 06531, Ankara, Turkey - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Astronomy
Astronomy, Astrophysics and Cosmology
Physics - 出版者：Springer India
- ISSN：0974-9845
文摘
We have identically fabricated 50 dots of Au/n-Si/Al Schottky structures and investigated the mean values of diode parameters from current-to-voltage (I–V) characteristics at 300 K. The values of diode parameters are determined from I–V characteristics, and Cheung and the modified Norde functions are varied from diode to diode although the Schottky structures are identically fabricated. The experimental values of ideality factor (n) and barrier height (ΦB) for 50 dots of the Au/n-Si/Al Schottky structures have ranged from 1.048 to 1.695 and from 0.708 to 0.807 eV, respectively. The interface state densities (N ss) are approximately obtained from 2 × 1013 to 2 × 1011 eV−1 cm−2 in the energy range from E c − 0.45 to E c − 0.75 eV, respectively. These findings can be referred to lateral barrier inhomogeneities of Schottky diodes. The distributions of all calculated parameters have been fitted by means of Gaussian function. The mean n and ΦB values have been found to be 1.316 ± 0.213 and 0.758 ± 0.030 eV, respectively. Furthermore, the value of lateral homogenous barrier height for 50 dots of Schottky structures is determined as 0.802 eV from the linear relationship between n and ΦB. Keywords Schottky structure Current–voltage Barrier height Ideality factor Series resistance Interface state density