Photoconductivities in monocrystalline layered V2O5 nanowires grown by physical vapor deposition
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- 作者：Ruei-San Chen (5)
Wen-Chun Wang (6)
Ching-Hsiang Chan (6)
Hung-Pin Hsu (5)
Li-Chia Tien (6)
Yu-Jyun Chen (6) - 关键词：Vanadium pentoxide ; Nanowire ; Photoconductivity ; Physical vapor deposition ; Normalized gain
- 刊名：Nanoscale Research Letters
- 出版年：2013
- 出版时间：December 2013
- 年：2013
- 卷：8
- 期：1
- 全文大小：725 KB
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Wen-Chun Wang (6)
Ching-Hsiang Chan (6)
Hung-Pin Hsu (5)
Li-Chia Tien (6)
Yu-Jyun Chen (6)
5. Department of Electronic Engineering, Ming Chi University of Technology, Taishan, Taipei, 243, Taiwan
6. Department of Materials Science and Engineering, National Dong Hwa University, Shoufeng, Hualien, 974, Taiwan - ISSN：1556-276X
文摘
Photoconductivities of monocrystalline vanadium pentoxide (V2O5) nanowires (NWs) with layered orthorhombic structure grown by physical vapor deposition (PVD) have been investigated from the points of view of device and material. Optimal responsivity and gain for single-NW photodetector are at 7,900 A W-1 and 30,000, respectively. Intrinsic photoconduction (PC) efficiency (i.e., normalized gain) of the PVD-grown V2O5 NWs is two orders of magnitude higher than that of the V2O5 counterpart prepared by hydrothermal approach. In addition, bulk and surface-controlled PC mechanisms have been observed respectively by above- and below-bandgap excitations. The coexistence of hole trapping and oxygen sensitization effects in this layered V2O5 nanostructure is proposed, which is different from conventional metal oxide systems, such as ZnO, SnO2, TiO2, and WO3.