Cathodoluminescence and Field-Emission Properties of β-Ga2O3 Nanobelts

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• 作者：Li-Chia Tien (1) lctien@mail.ndhu.edu.tw
  Chih-Cheng Tseng (1)
  Ching-Hwa Ho (2)
• 关键词：Oxides – nanostructures – electrical property
• 刊名：Journal of Electronic Materials
• 出版年：2012
• 出版时间：November 2012
• 年：2012
• 卷：41
• 期：11
• 页码：3056-3061
• 全文大小：545.4 KB
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• 作者单位：1. Department of Materials Science and Engineering, National Dong Hwa University, Shoufeng, 974 Hualien, Taiwan2. Graduate Institute of Engineering and Graduate Institute of Applied Technology, National Taiwan University of Science and Technology, Taipei, 106 Taiwan
• ISSN：1543-186X

文摘

β-Ga₂O₃ nanobelts were synthesized using a vapor transport process in a controlled ambient. Structural characterization revealed that the as-synthesized samples consisted of monoclinic β-Ga₂O₃ nanobelts, and the presence of gallium-associated defects was verified using cathodoluminescence (CL). The formation of gallium-associated defects was explained by the insufficiency of the supply of cations, generating gallium vacancies on the (010) facet during growth. Furthermore, field-emission measurements indicated that β-Ga₂O₃ nanobelts exhibited defect-related electron emission. The turn-on fields of β-Ga₂O₃ nanobelts increased significantly with the degree of structural defects. For a sample prepared under 15% ambient oxygen, Fowler–Nordheim (F–N) analysis revealed two distinct field-enhancement factors of 1194 and 276, respectively. A correlation between field emission and structural defects was proposed. The experimental results demonstrate the presence of gallium-associated defects, which behave as electron traps, degrading the electron field-emission properties of β-Ga₂O₃ nanobelts.