Evaluation of Strain Measurement in a Die-to-Interposer Chip Using In Situ Synchrotron X-Ray Diffraction and Finite-Element Analysis

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• 作者：Hsueh-Hsien Hsu (1)
  Tz-Cheng Chiu (2)
  Tao-Chih Chang (3)
  Shin-Yi Huang (3)
  Hsin-Yi Lee (4)
  Ching-Shun Ku (4)
  Yang-Yi Lin (1)
  Chien-Hao Su (1)
  Li-Wei Chou (1)
  Yao-Tsung Ouyang (1)
  YI-Ting Huang (1)
  Albert T. Wu (1)
  
• 关键词：3D IC ; in situ strain measurement ; interposer
• 刊名：Journal of Electronic Materials
• 出版年：2014
• 出版时间：January 2014
• 年：2014
• 卷：43
• 期：1
• 页码：52-56
• 全文大小：261 KB
• 作者单位：Hsueh-Hsien Hsu (1)
  Tz-Cheng Chiu (2)
  Tao-Chih Chang (3)
  Shin-Yi Huang (3)
  Hsin-Yi Lee (4)
  Ching-Shun Ku (4)
  Yang-Yi Lin (1)
  Chien-Hao Su (1)
  Li-Wei Chou (1)
  Yao-Tsung Ouyang (1)
  YI-Ting Huang (1)
  Albert T. Wu (1)
  
  1. Department of Chemical and Materials Engineering, National Central University, Jhongli, 320, Taiwan
  2. Department of Mechanical Engineering, National Cheng Kung University, Tainan, 701, Taiwan
  3. Industrial Technology Research Institute, Chutung, Hsinchu, 310, Taiwan
  4. National Synchrotron Radiation Research Center, Hsinchu Science Park, Hsinchu, 300, Taiwan
  
• ISSN：1543-186X

文摘

To decrease the size of portable devices, this study incorporates a stacked three-dimensional integrated circuit architecture into advanced packaging techniques. The traditional FR-4 substrate was substituted with silicon interposers. Because silicon is rigid and highly resistant to deformation, this minimizes thermal stress caused by thermal expansion mismatch in the structure. This study shows that underfill applied stress to the dies when the temperature was varied, threatening the devices. Damage was most likely to occur at the die corners. The stresses were measured in?situ at different temperatures using synchrotron radiation x-ray analysis. Simulation results confirm the measured data trends.