The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

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• 作者：Wei-Ching Huang ; Chung-Ming Chu ; Chi-Feng Hsieh…
• 关键词：AlN ; GaN ; surface morphology ; polarity ; nucleation layer ; inversion domain
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：45
• 期：2
• 页码：859-866
• 全文大小：1,782 KB
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• 作者单位：Wei-Ching Huang (1)
  Chung-Ming Chu (2)
  Chi-Feng Hsieh (1)
  Yuen-Yee Wong (1)
  Kai-wei Chen (1)
  Wei-I Lee (2)
  Yung-Yi Tu (1)
  Edward-Yi Chang (1)
  Chang Fu Dee (3)
  B. Y. Majlis (3)
  S. L. Yap (4)
  
  1. Department of Materials Science and Engineering National Chiao Tung University, 1001 University Rd., Hsinchu, 30010, Taiwan
  2. Department of Electrophysics National Chiao Tung University, 1001 University Rd., Hsinchu, 30010, Taiwan
  3. Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia (UKM), 43600, Bangi, Selangor, Malaysia
  4. Department of Physics, Faculty of Science, Plasma Technology Research Centre, University of Malaya, 50603, Kuala Lumpur, Malaysia
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

The influence of low-temperature AlN (LT-AlN) nucleation layer thickness on the material properties of the GaN layer grown on the double-step AlN layer is investigated. When GaN was grown without the LT-AlN nucleation layer, the GaN layer has low sheet resistance of 464 ohm/sq and the surface was decorated with pitted region. On the other hand, when a LT-AlN layer with a thickness of 5 nm was inserted, a GaN layer with sheet resistance higher than 106 ohm/sq was achieved. This thin nucleation layer also improved the GaN morphology, suppressed inversion domain formation, and reduced oxygen impurity incorporation. However, the surface morphology and quality of the GaN crystal were severely degraded when the LT-AlN thickness was increased to 10 nm due to the formation of disorientated grains in the LT-AlN layer. Keywords AlN GaN surface morphology polarity nucleation layer inversion domain