Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature

详细信息    查看全文

• 作者：Zhi Liu (1)
  Buwen Cheng (1)
  Weixuan Hu (1)
  Shaojian Su (1)
  Chuanbo Li (1)
  Qiming Wang (1)
  
• 关键词：Ge quantum dots ; Photoluminescence ; Ostwald ripening ; Overgrowth temperature
• 刊名：Nanoscale Research Letters
• 出版年：2012
• 出版时间：December 2012
• 年：2012
• 卷：7
• 期：1
• 全文大小：306KB
• 参考文献：1. Cullis AG, Canham LT: Visible light emission due to quantum size effects in highly porous crystalline silicon. / Nature 1991, 353:335-38. CrossRef
  2. Green MA, Zhao J, Wang A, Reece PJ, Gal M: Efficient silicon light-emitting diodes. / Nature 2001, 412:805-08. CrossRef
  3. Hu W, Cheng B, Xue C, Xue H, Su S, Bai A, Luo L, Yu Y, Wang Q: Electroluminescence from Ge on Si substrate at room temperature. / Appl Phys Lett 2009, 95:092102. CrossRef
  4. Liu J, Sun X, Camacho-Aguilera R, Kimerling LC, Michel J: Ge-on-Si laser operating at room temperature. / Opt Express 2010, 35:679-81.
  5. Alivisatos AP: Semiconductor clusters, nanocrystals, and quantum dots. / Science 1996, 271:933-37. CrossRef
  6. Stangl J, Holy V, Bauer G: Structural properties of self-organized semiconductor nanostructures. / Rev Mod Phys 2004, 76:725-83. CrossRef
  7. Talalaev VG, Cirlin GE, Tonkikh AA, Zakharov ND, Werner P, Gosele U, Tomm JW, Elsaesser T: Miniband-related 1.4-.8 mu m luminescence of Ge/Si quantum dot superlattices. / Nanoscale Res Lett 2006, 1:137-53. CrossRef
  8. Brunhes T, Boucaud P, Sauvage S, Aniel F, Lourtioz JM, Hernandez C, Campidelli Y, Kermarrec O, Bensahel D, Faini G, Sagnes I: Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition. / Appl Phys Lett 2000, 77:1822-824. CrossRef
  9. Dashiell MW, Denker U, Muller C, Costantini G, Manzano C, Kern K, Schmidt OG: Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures. / Appl Phys Lett 2002, 80:1279-281. CrossRef
  10. Chang WH, Chou AT, Chen WY, Chang HS, Hsu TM, Pei Z, Chen PS, Lee SW, Lai LS, Lu SC, Tsai MJ: Room-temperature electroluminescence at 1.3 and 1.5 mu m from Ge/Si self-assembled quantum dots. / Appl Phys Lett 2003, 83:2958-960. CrossRef
  11. Dashiell MW, Denker U, Schmidt OG: Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001). / Appl Phys Lett 2001, 79:2261. CrossRef
  12. Shichijo H, Kolbas RM, Holonyak N, Dupuis RD, Dapkus PD: Carrier collection in a semiconductor quantum well. / Solid State Commun 1978, 27:1029-032. CrossRef
  13. Stoffel M, Denker U, Schmidt OG: Electroluminescence of self-assembled Ge hut clusters. / Appl Phys Lett 2003, 82:3236-238. CrossRef
  14. Liu XC, Leadley DR: Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures. / J Phys D: Appl Phys 2010, 43:505303. CrossRef
  15. Meduňa M, Caha O, Keplinger M, Stangl J, Bauer G, Mussler G, Grützmacher D: Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction. / Phys Status Solidi A 2009, 206:1775-779. CrossRef
  16. Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS: Evolution of Ge islands on Si(001) during annealing. / J Appl Phys 1999, 85:1159-171. CrossRef
  17. Ross FM, Tersoff J, Tromp RM: Coarsening of self-assembled Ge quantum dots on Si(001). / Phys Rev Lett 1998, 80:984. CrossRef
  18. Fermi E: / Nuclear Physics. Chicago: University of Chicago Press; 1950:187-91.
  19. Peng YH, Hsu C-H, Kuan CH, Liu CW, Chen PS, Tsai MJ, Suen YW: The evolution of electroluminescence in Ge quantum-dot diodes with the fold number. / Appl Phys Lett 2004, 85:6107-109. CrossRef
  20. Luan HC, Lim DR, Lee KK, Chen KM, Sandland JG, Wada K, Kimerling LC: High-quality Ge epilayers on Si with low threading-dislocation densities. / Appl Phys Lett 1999, 75:2909-911. CrossRef
  21. Mooney PM, Dacol FH, Tsang JC, Chu JO: Raman scattering analysis of relaxed GexSi1-x alloy layers. / Appl Phys Lett 2069, 1993:62.
  22. Volodin VA, Yakimov AI, Dvurechenskii AV, Efremov MD, Nikiforov AI, Gatskevich EI, Ivlev GD, Mikhalev GY: Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation. / Semiconductors 2006, 40:202-09. CrossRef
  23. Cui J, Lin JH, Wu YQ, Fan YL, Zhong ZY, Yang XJ, Jiang ZM: Formation of nanopits in Si capping layers on SiGe quantum dots. / Nanoscale Res Lett 2010, 6:59.
  
• 作者单位：Zhi Liu (1)
  Buwen Cheng (1)
  Weixuan Hu (1)
  Shaojian Su (1)
  Chuanbo Li (1)
  Qiming Wang (1)
  
  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, QingHua East Road, Haidian District, Beijing, 100083, People’s Republic of China
  
• ISSN：1556-276X

文摘

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520?°C, while Si spacers were grown at various temperatures (520?°C, 550?°C, and 580?°C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs-size and content were investigated by atomic force microscopy and Raman scattering measurements.