Enhanced photoluminescence from porous silicon nanowire arrays

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• 作者：Chunqian Zhang (5)
  Chuanbo Li (5)
  Zhi Liu (5)
  Jun Zheng (5)
  Chunlai Xue (5)
  Yuhua Zuo (5)
  Buwen Cheng (5)
  Qiming Wang (5)
  
• 关键词：Si nanowire ; Porous structure ; PL ; 78.55. ; m ; 78.67.Uh ; 78.55.Mb
• 刊名：Nanoscale Research Letters
• 出版年：2013
• 出版时间：December 2013
• 年：2013
• 卷：8
• 期：1
• 全文大小：412KB
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• 作者单位：Chunqian Zhang (5)
  Chuanbo Li (5)
  Zhi Liu (5)
  Jun Zheng (5)
  Chunlai Xue (5)
  Yuhua Zuo (5)
  Buwen Cheng (5)
  Qiming Wang (5)
  
  5. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
  
• ISSN：1556-276X

文摘

The enhanced room-temperature photoluminescence of porous Si nanowire arrays and its mechanism are investigated. Over 4 orders of magnitude enhancement of light intensity is observed by tuning their nanostructures and surface modification. It is concluded that the localized states related to Si-O bonds and self-trapped excitations in the nanoporous structures are attributed to the strong light emission.