Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI’s Using Universal Rad-SPICE MOSFET Model

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• 作者：Konstantin O. Petrosyants ; Lev M. Sambursky…
• 关键词：SOI CMOS circuits ; Fault modeling and simulation ; Radiation hardness ; TID ; Dose rate ; Single events ; Compact SPICE models ; Novel RH SOI MOS structures ; Model parameter extraction
• 刊名：Journal of Electronic Testing
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：33
• 期：1
• 页码：37-51
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems; Electrical Engineering; Computer-Aided Engineering (CAD, CAE) and Design;
• 出版者：Springer US
• ISSN：1573-0727
• 卷排序：33

文摘

The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI/SOS CMOS IC’s is presented. It is realized at three levels: CMOS devices – typical analog or digital circuit fragments – complete IC’s. For this purpose, a universal compact SOI/SOS MOSFET model for SPICE simulation software with account for TID, dose rate and single event effects is developed. The model parameters extraction procedure is described in great depth taking into consideration radiation effects and peculiarities of novel radiation-hardened (RH) SOI/SOS MOS structures. Examples of radiation-induced fault simulation in analog and digital SOI/SOS CMOS LSI’s are presented for different types of radiation influence. The simulation results show the difference with experimental data not larger than 10–20% for all types of radiation.